8542.32.00.41 - Static read-write random access (SRAM)

This HTS category specifically covers Static Random Access Memory (SRAM) integrated circuits. SRAM is a type of semiconductor memory that uses bistable latching circuitry (flip-flops) to store each bit of data. Unlike Dynamic RAM (DRAM), SRAM does not require periodic refreshing to maintain its data integrity, making it faster and requiring less power consumption per operation, albeit at a higher cost and lower density. This makes SRAM ideal for applications where speed and immediate data access are paramount, such as CPU cache memory.

Distinguishing this category from its siblings, it is important to note that while all fall under "Memories," their underlying technology and function differ significantly. DRAM, another common type of RAM, stores data in separate capacitor and transistor pairs and thus requires constant refreshing. Electrically Erasable Programmable Read-Only Memory (EEPROM) and Erasable Programmable Read-Only Memory (EPROM) are types of non-volatile memory, meaning they retain data even when power is removed, and are designed for storing firmware or configuration data, not for active, high-speed data manipulation like SRAM.

As this classification for Static Read-Write Random Access (SRAM) represents a leaf node within the HTS database, there are no further subcategories. The classification concludes with this specific designation, indicating that any imported or exported goods meeting the definition of SRAM integrated circuits will be classified under HTS Code 8542.32.00.41. This ensures a definitive and precise categorization for customs purposes, removing ambiguity for these particular memory components.