8542.32.00.36 - Over 1 gigabit 🖩

This HTS classification, 8542.32.00.36, specifically covers dynamic random-access memory (DRAM) integrated circuits with a storage capacity exceeding 1 gigabit. These are sophisticated semiconductor devices designed for high-speed, volatile data storage and retrieval, essential components in modern computing and electronic systems. Their primary function is to temporarily hold data that the central processing unit (CPU) needs immediate access to for executing programs and processing information.

The distinction of this category lies in its precise capacity threshold. It is differentiated from sibling categories by the "over 1 gigabit" parameter. For example, 8542.32.00.32 covers DRAM with capacities exceeding 512 megabits but not exceeding 1 gigabit. Therefore, a DRAM chip with a capacity of 1.1 gigabits or more would fall under this heading, while one with a capacity of 900 megabits would be classified under a preceding sibling category. This granular division ensures accurate tariff application based on technological advancement and product capability.

As a leaf node, this category does not have further subdivisions. The classification at this level is final for DRAM integrated circuits meeting the "over 1 gigabit" criterion. When classifying, professionals should verify the advertised or documented storage capacity of the DRAM chip against this threshold. Given the rapid evolution of memory technology, it is crucial to consult the most up-to-date specifications for each component to ensure correct classification within the Harmonized Tariff Schedule.