8542.32.00.32 - Over 512 megabits but not over 1 gigabit 🖩

This HTS classification specifically covers dynamic random-access memory (DRAM) integrated circuits with a storage capacity exceeding 512 megabits but not exceeding 1 gigabit. These semiconductor devices are fundamental components in modern electronic systems, designed for the temporary storage of data that can be both read from and written to, enabling rapid access for processors. Examples include DRAM modules used in personal computers, servers, graphics cards, and other high-performance electronic devices where substantial working memory is required.

This category is distinguished from its sibling categories by its precise capacity range. For instance, it is differentiated from HTS code 8542.32.00.28, which covers DRAM with a capacity of "Over 256 megabits but not over 512 megabits," and from 8542.32.00.36, which classifies DRAM with a capacity "Over 1 gigabit." The defining characteristic for classification at this level is the precise megabit count of the memory storage.

As this is a leaf node, there are no further subcategories within this specific HTS code. Therefore, the classification is finalized based on the identified criteria of being a dynamic read-write random access integrated circuit with a storage capacity within the specified range of over 512 megabits and not over 1 gigabit. Proper identification of the product's technical specifications, particularly its memory density, is crucial for accurate customs declaration under this heading.