8542.32.00.24 - Over 128 megabits but not over 256 megabits 🖩

HTS code 8542.32.00.24 specifically classifies dynamic read-write random access memory (DRAM) integrated circuits that have a storage capacity exceeding 128 megabits but not exceeding 256 megabits. These are semiconductor devices designed for volatile data storage and retrieval, forming the main memory in many electronic systems such as computers, servers, and high-performance consumer electronics. The critical defining characteristic for this classification is the precise range of memory capacity.

This category is distinguished from its siblings by its specific bit capacity. For instance, 8542.32.00.02 covers DRAM with a capacity of 128 megabits or less, while 8542.32.00.28 applies to DRAM with a capacity exceeding 256 megabits but not exceeding 512 megabits. Further distinctions exist for larger capacities under codes 8542.32.00.32 and 8542.32.00.36, ensuring that each classification reflects a distinct tier of memory performance and density.

As a leaf node within the HTS structure, 8542.32.00.24 does not have further subdivisions. Classification within this code relies solely on the accurate determination of the integrated circuit's DRAM storage capacity, falling strictly within the specified 128 to 256 megabit range. This precise delimitation is essential for correct tariff application and trade statistics.