8542.32.00.02 - Not over 128 megabits

This classification covers dynamic read-write random access memory (DRAM) integrated circuits with a storage capacity not exceeding 128 megabits. These semiconductor devices are crucial components in a wide range of electronic equipment, serving as temporary storage for data actively being processed by a central processing unit. They are characterized by their volatile nature, meaning data is lost when power is removed, and their ability to continuously refresh the stored information to maintain data integrity.

The defining characteristic of this specific subcategory is its storage capacity threshold. It differentiates itself from its sibling categories by specifically excluding DRAM chips with capacities exceeding 128 megabits. For example, products classified under 8542.32.00.24 would have a capacity of over 128 megabits but not exceeding 256 megabits, demonstrating a direct, quantitative distinction in storage capability.

As a leaf node, this classification does not have further subcategories. Therefore, the primary focus for classification within this node is the precise determination of the megabit capacity. This means that any DRAM integrated circuit falling within the 8542.32.00.02 code must have a storage capacity of 128 megabits or less, and its function must be that of a dynamic random access memory.